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Intermediate order and its effect on the random field in an amorphous homopolar semiconductor

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The binary correlation function of a random field is calculated with the simplest model concepts, taking into account the presence of intermediate order in a macroscopically homogeneous and isotropic homopolar semiconductor.

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Literature cited

  1. G. Lucovsky and F. L. Galeener, J. Non-Cryst. Solids,35–36, 1209 (1980).

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  3. V. L. Bonch-Bruevich, Electron Theory of Disordered Semiconductors [in Russian], Nauka, Moscow (1981).

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Authors and Affiliations

  1. Ukrainian Academy of Agriculture, USSR

    V. D. Iskra

Authors
  1. V. D. Iskra
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 31–34, November, 1982.

The author is grateful to V. L. Bonch-Bruevich for his interest is this work and for a number of useful discussions.

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Iskra, V.D. Intermediate order and its effect on the random field in an amorphous homopolar semiconductor. Soviet Physics Journal 25, 1002–1005 (1982). https://doi.org/10.1007/BF00891895

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  • DOI: https://doi.org/10.1007/BF00891895

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