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Physical model and mechanism of charge-carrier transfer in tungsten silicide-silicon contacts

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

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Literature cited

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Authors and Affiliations

  1. T. G. Shevchenko Kiev State University, USSR

    I. V. Belousov, V. V. Il'chenko & V. I. Strikha

Authors
  1. I. V. Belousov
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  2. V. V. Il'chenko
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  3. V. I. Strikha
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 27–31, November, 1982.

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Belousov, I.V., Il'chenko, V.V. & Strikha, V.I. Physical model and mechanism of charge-carrier transfer in tungsten silicide-silicon contacts. Soviet Physics Journal 25, 998–1002 (1982). https://doi.org/10.1007/BF00891894

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  • DOI: https://doi.org/10.1007/BF00891894

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