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Soviet Physics Journal

, Volume 25, Issue 11, pp 996–998 | Cite as

Low-temperature conductivity of a two-dimensional disordered semiconductor under power localization conditions

  • V. L. Bonch-Bruevich
  • To Tkhi Bik Nguet
Physics of Semiconductors and Dielectrics
  • 12 Downloads

Abstract

An estimate is given of the temperature dependence of the conductivity under conditions when the Fermi level is in the “power” localization domain.

Keywords

Localization Condition Fermi Level Localization Domain Power Localization Power Localization Condition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Literature cited

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    M. Kaveh and N. F. Mott, J. Phys. C,14, L 177 (1981).Google Scholar
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    M. Kaveh and N. F. Mott, J. Phys. C,14, L 183 (1981).Google Scholar
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    V. L. Bonch-Bruevich, “On the question of power-law localization of charge carriers in a two-dimensional disordered system,” Preprint No. 3, Moscow State University, Physics Department (1981).Google Scholar
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    V. L. Bonch-Bruevich, I. P. Zvyagin, R. Kaiper, A. G. Mironov, R. Enderlain, and B. Esser, Electron Theory of Disordered Semiconductors [in Russian], Nauka, Moscow (1981), Chap. IV.Google Scholar
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    M. Pepper, Preprint (1982).Google Scholar

Copyright information

© Plenum Publishing Corporation 1983

Authors and Affiliations

  • V. L. Bonch-Bruevich
    • 1
  • To Tkhi Bik Nguet
    • 1
  1. 1.M. V. Lomonosov Moscow State UniversityUSSR

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