Soviet Physics Journal

, Volume 25, Issue 11, pp 996–998 | Cite as

Low-temperature conductivity of a two-dimensional disordered semiconductor under power localization conditions

  • V. L. Bonch-Bruevich
  • To Tkhi Bik Nguet
Physics of Semiconductors and Dielectrics


An estimate is given of the temperature dependence of the conductivity under conditions when the Fermi level is in the “power” localization domain.


Localization Condition Fermi Level Localization Domain Power Localization Power Localization Condition 
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Literature cited

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    M. Kaveh and N. F. Mott, J. Phys. C,14, L 177 (1981).Google Scholar
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    V. L. Bonch-Bruevich, “On the question of power-law localization of charge carriers in a two-dimensional disordered system,” Preprint No. 3, Moscow State University, Physics Department (1981).Google Scholar
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    V. L. Bonch-Bruevich, I. P. Zvyagin, R. Kaiper, A. G. Mironov, R. Enderlain, and B. Esser, Electron Theory of Disordered Semiconductors [in Russian], Nauka, Moscow (1981), Chap. IV.Google Scholar
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Copyright information

© Plenum Publishing Corporation 1983

Authors and Affiliations

  • V. L. Bonch-Bruevich
    • 1
  • To Tkhi Bik Nguet
    • 1
  1. 1.M. V. Lomonosov Moscow State UniversityUSSR

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