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Soviet Physics Journal

, Volume 25, Issue 11, pp 994–996 | Cite as

Optical electron transitions in a two-dimensional disordered semiconductor

  • V. L. Bonch-Bruevich
  • To Tkhi Bik Nguet
Physics of Semiconductors and Dielectrics
  • 15 Downloads

Abstract

The frequency dependence of the light absorption coefficient associated with electron transitions between states of strong and weak localization is studied.

Keywords

Absorption Coefficient Frequency Dependence Electron Transition Light Absorption Light Absorption Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Literature cited

  1. 1.
    N. F. Mott, M. Pepper, S. Pollitt, R. H. Wallis, and C. J. Adkins, Proc. R. Soc. London,A315, 169 (1975).Google Scholar
  2. 2.
    M. Kaveh and N. F. Mott, J. Phys. C.,14, L 177(a), L 183(b) (1981).Google Scholar
  3. 3.
    J. L. Pichard and G. Sarma, J. Phys.,C4 Suppl.,42, 37 (1981).Google Scholar
  4. 4.
    V. L. Bonch-Bruevich, “On the question of power localization of charge carriers in a two-dimensional disordered system,” Preprint No. 3, Moscow State University, Physics Department (1982).Google Scholar
  5. 5.
    V. L. Bonch-Bruevich, I. P. Zvyagin, R. Kaiper, A. G. Mironov, R. Enderlain, and B. Esser, Electronic Theory of Disordered Semiconductors [in Russian], Nauka, Moscow (1981).Google Scholar

Copyright information

© Plenum Publishing Corporation 1983

Authors and Affiliations

  • V. L. Bonch-Bruevich
    • 1
  • To Tkhi Bik Nguet
    • 1
  1. 1.M. V. Lomonosov Moscow State UniversityUSSR

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