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Effects of gas flow speed and chlorine concentration on tellurium uptake in gas-phase epitaxy of gallium arsenide

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

A comparison is made between the growth kinetics of gallium arsenide films and the uptake of tellurium in gas-phase epitaxy in a chlorine system. The ratelimiting stages for both processes are the same and are associated with diffusion through the boundary layer and the rates of surface processes (adsorption and desorption).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    L. G. Lavrent'eva, S. E. Toropov & L. P. Porokhovnichenko

Authors
  1. L. G. Lavrent'eva
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  2. S. E. Toropov
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  3. L. P. Porokhovnichenko
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 18–21, November, 1982.

We are indebted to A. I. Saprykin for performing the mass spectrometry of the gallium arsenide films.

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Lavrent'eva, L.G., Toropov, S.E. & Porokhovnichenko, L.P. Effects of gas flow speed and chlorine concentration on tellurium uptake in gas-phase epitaxy of gallium arsenide. Soviet Physics Journal 25, 990–993 (1982). https://doi.org/10.1007/BF00891891

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  • DOI: https://doi.org/10.1007/BF00891891

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