Abstract
An expression is obtained for the secondary radiation section of polar semiconductors due to radiation trapping of electrons or holes at deep impurity levels with the participation of intermediate quasilocal states. The dependence of the section on the frequency of the exciting monochromatic wave is determined mainly by the nonequilibrium electron distribution function, which is a number of equidistant peaks. The spacing between adjacent peaks equals the frequency of the longitudinal optical (LO) phonon, while the peak width is determined by the dispersion of the LO phonons. The distinction between the radiation and Lorentz line shapes is also associated with the form of the electron distribution function.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 89–93, March, 1982.
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Belyavskii, V.I. Secondary radiation in impurity polar semiconductors. Soviet Physics Journal 25, 282–286 (1982). https://doi.org/10.1007/BF00891704
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DOI: https://doi.org/10.1007/BF00891704