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Kinetics of formation of defects of the step stopping center (SSC) type in gas-phase epitaxy of gallium arsenide

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Literature cited

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    I. V. Ivonin, L. M. Krasil'nikova, L. G. Lavrent'eva & G. F. Lymar'

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  1. I. V. Ivonin
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  2. L. M. Krasil'nikova
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  3. L. G. Lavrent'eva
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  4. G. F. Lymar'
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 115–117, June, 1979.

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Ivonin, I.V., Krasil'nikova, L.M., Lavrent'eva, L.G. et al. Kinetics of formation of defects of the step stopping center (SSC) type in gas-phase epitaxy of gallium arsenide. Soviet Physics Journal 22, 672–674 (1979). https://doi.org/10.1007/BF00891572

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  • DOI: https://doi.org/10.1007/BF00891572

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