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Soviet Physics Journal

, Volume 22, Issue 6, pp 589–593 | Cite as

Surface-barrier structures on AlxGa1−xSb. II. Band gap dependence of barrier height

  • G. K. Arbuzova
  • A. A. Vilisov
  • V. P. Germogenov
  • N. K. Maksimova
Article
  • 14 Downloads

Abstract

The short-circuit photocurrent is used to find the forbidden gap width Eg and barrier height ΦB of Pd-n-AlxGa1−xSb (0.1 ⩽s x ⩽ 0.7) surface-barrier structure fabricated electrochemically. The barrier height was also determined from the capacitive voltage cutoff and the current-voltage characteristics. For metal-n-AlxGa1−xSb contacts the linear approximation to ΦB(Eg) is given by ΦB = 0.64Eg + 0.16 eV. In some samples the photoresponse spectrum has a hump, indicating the effects of deep levels.

Keywords

Linear Approximation Barrier Height Deep Level Capacitive Voltage Voltage Cutoff 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1979

Authors and Affiliations

  • G. K. Arbuzova
    • 1
  • A. A. Vilisov
    • 1
  • V. P. Germogenov
    • 1
  • N. K. Maksimova
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical InstituteTomsk State UniversityUSSR

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