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On the question of the uniqueness of determining defect parameters in semiconductors on the basis of an analysis of the temperature dependence of the hall charge carrier concentration by using an electronic computer

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Literature cited

  1. M. A. Krivov, E. A. Popova, and E. V. Malisova, Izv. VUZ. Fizika, No. 8, 82 (1971).

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  2. D. Hudson, Statistics for Physicists [Russian translation], Mir, Moscow (1970).

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  3. J. Blackmore, Electron Statistics in Semiconductors [Russian translation], No. 4, Mir, Moscow (1964), p. 135.

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  4. G. A. Zakharova, M. A. Krivov, E. V. Malisova, and E. A. Popova, Fiz. Tekhn. Poluprovod.,6, 201 (1972).

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  5. M. A, Krivov, E. V. Malisova, and E. A. Popova, Izv. VUZ. Fizika (in press).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, USSR

    M. A. Krivov, E. A. Popova & E. V. Malisova

Authors
  1. M. A. Krivov
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  2. E. A. Popova
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  3. E. V. Malisova
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 16, No. 7, pp. 156–159, July, 1973.

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Krivov, M.A., Popova, E.A. & Malisova, E.V. On the question of the uniqueness of determining defect parameters in semiconductors on the basis of an analysis of the temperature dependence of the hall charge carrier concentration by using an electronic computer. Soviet Physics Journal 16, 1036–1038 (1973). https://doi.org/10.1007/BF00891536

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  • DOI: https://doi.org/10.1007/BF00891536

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