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Soviet Physics Journal

, Volume 20, Issue 1, pp 87–90 | Cite as

Impurity states in narrow-gap and gapless semiconductors

  • E. L. Dolgov
  • V. K. Dugaev
  • P. P. Petrov
Article
  • 21 Downloads

Abstract

The influence of interband interactions on the location of impurity stages in narrow-gap and gapless semiconductors of AIVBVI type is considered in the T-matrix approximation. It is shown that taking account of the interband interaction results in diminution of the activation energy of the impurity level.

Keywords

Activation Energy Impurity Level Impurity State Interband Interaction Gapless Semiconductor 
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Copyright information

© Plenum Publishing Corporation 1977

Authors and Affiliations

  • E. L. Dolgov
    • 1
  • V. K. Dugaev
    • 1
  • P. P. Petrov
    • 1
  1. 1.Lvov Polytechnic InstituteUSSR

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