Abstract
Temperature dependence of the low field mobility in the presence of scattering on polar optical phonons in GaAs and InAs is calculated with the help of a special modification of the Monte Carlo method. The obtained data are compared with known analytical approximations. The parabolic and the Kane dispersion laws are considered. It is shown that for both dispersion laws the low temperature approximation gives better results over the whole temperature interval studied. Reasons for widening of the region of applicability of the low-temperature approximation for the Kane dispersion law are studied.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 40–45, September, 1981.
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Karavaev, G.F., Chernyakhovskii, L.K. Temperature dependence of the low-field mobility in the presence of scattering on polar optical phonons. Calculation using Monte Carlo method. Soviet Physics Journal 24, 816–820 (1981). https://doi.org/10.1007/BF00891326
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DOI: https://doi.org/10.1007/BF00891326