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Investigation of “long” germanium diodes with negative differential resistivity

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Literature cited

  1. A. A. Vilisov, V. P. Voronkov, and V. M. Diamant, Izv. VUZ, Fizika, No. 6, 148 (1975).

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  2. S. M. Ryvkin, Photoelectric Phenomena in Semiconductors [in Russian], 244 Fizmatgiz (1963).

  3. B. M. Garin and V. I. Stafeev, Fiz. Tekh. Poluprovod.,6, No. 1 (1973).

  4. A. A. Prukhvanidze and V. I. Stafeev, Physicotechnological Questions of Cybernetics [in Russian], No. 3, 45–60, Kiev (1967).

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  5. A. A. Lebedev, Physics of Electron-Hole Junctions and Semiconductor Devices [in Russian], 291–300, Nauka (1969).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, USSR

    A. A. Vilisov, V. P. Voronkov & V. M. Diamant

  2. Tomsk State University, USSR

    A. A. Vilisov, V. P. Voronkov & V. M. Diamant

Authors
  1. A. A. Vilisov
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  2. V. P. Voronkov
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  3. V. M. Diamant
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Translated from Izvestiya Uchebnykh Zavedenii, Fizika, No. 6, pp. 152–154, June, 1975.

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Vilisov, A.A., Voronkov, V.P. & Diamant, V.M. Investigation of “long” germanium diodes with negative differential resistivity. Soviet Physics Journal 18, 894–896 (1975). https://doi.org/10.1007/BF00891185

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  • DOI: https://doi.org/10.1007/BF00891185

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