Literature cited
A. P. Vyatkin and V. P. Voronkov, Izv. Vyssh. Ucheb. Zaved., Fizika, No. 7, 123 (1971).
A. A. Lebedev, V. I. Stafeev, and V. M. Tuchkevich, Zh. Tekhn. Fiz.,26, No. 10, 2131 (1956).
V. M. Glazov and V. S. Zemskov, Physicochemical Principles of Doping Semiconductors [in Russian], Nauka, Moscow, p. 102 (1967).
R. F. Kazarinov, V. I. Stafeev, and R. A. Suris, Fiz. Tekhn. Poluprov.1, 9 (1937).
B. M. Garin and V. I. Stafeev, Fiz. Tekhn. Poluprov.,6, (1972).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 148–150, June, 1975.
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Vilisov, A.A., Voronkov, V.P. & Diamant, V.M. Influence of the fusion mode on the characteristics of “long” germanium diodes. Soviet Physics Journal 18, 888–890 (1975). https://doi.org/10.1007/BF00891183
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DOI: https://doi.org/10.1007/BF00891183