Abstract
A study is made of the dependence of the growth rate of epitaxial layers of gallium phosphide under conditions of temperature-gradient zone recrystallizatton on the thickness of the zone and the temperature. The coefficient of diffusion of phosphorus into gallium is calculated, and also the rate of change of the phosphorus concentration in the zone due to vaporization, the activation energies of the diffusion and vaporization processes, and also the atomickinetic coefficients of the crystallization process.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 115–118, July, 1974.
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Lozovskii, V.N., Mar'ev, V.B. Growth kinetics of epitaxial layers of gallium phosphide by temperature-gradient zone recrystallization. Soviet Physics Journal 17, 1002–1005 (1974). https://doi.org/10.1007/BF00891076
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DOI: https://doi.org/10.1007/BF00891076