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Growth of callium arsenide under various initial supersaturations in a Ga-AsCl3-H2 gas-transport system

III. Electrophysical properties of epitaxial layers

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Abstract

A study has been made of the dependence of the electrophysical properties of layers on the molar concentration of AsCl3 at the input of gas-transport system. It is shown that with an increase in the initial supersaturation, the impurity concentration in the films decreases and the carrier mobility increases. The observed changes in the layer parameters with the growth of the supersaturation is due to the combined effect of thermodynamic and kinetic factors.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    L. G. Lavrent'eva, M. D. Vilisova, Yu. T. Kataev & L. P. Porokhovnichenko

Authors
  1. L. G. Lavrent'eva
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  2. M. D. Vilisova
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  3. Yu. T. Kataev
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  4. L. P. Porokhovnichenko
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 23–27, May, 1978.

In conclusion, the authors thank M. P. Ruzaikin for his assistance in discussing the experimental results.

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Lavrent'eva, L.G., Vilisova, M.D., Kataev, Y.T. et al. Growth of callium arsenide under various initial supersaturations in a Ga-AsCl3-H2 gas-transport system. Soviet Physics Journal 21, 567–570 (1978). https://doi.org/10.1007/BF00890965

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  • DOI: https://doi.org/10.1007/BF00890965

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