Skip to main content
Log in

The diffusion mechanism for elements of groups III and V in silicon

  • Brief Communications and Letters to the Editor
  • Published:
Soviet Physics Journal Aims and scope

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Literature cited

  1. A. Seeger and K. P. Chik, Phys. Stat. Sol.,29, 455 (1968).

    Google Scholar 

  2. P. F. Schmidt, Appl. Phys. Letters,8, 264 (1966).

    Google Scholar 

  3. K. Bulthuis, Phys. Letters,A27, 193 (1968).

    Google Scholar 

  4. V. M. Gusev and V. V. Titov, Fiz. Tekh. Poluprov.,3, No. 3 (1969).

  5. V. A. Panteleev and L. N. Isavtseva, Izv. VUZ, Fizika, No. 8, 27 (1969).

    Google Scholar 

  6. G. I. Voronkova, V. V. Voronkov, M. I. Iglitsin, and B. M. Turovskii, Dokl. Akad. Nauk SSSR,186, 588 (1969).

    Google Scholar 

  7. K. P. Chik, Radiat. Effects,4, 33 (1970).

    Google Scholar 

  8. R. N. Choshtagore, Phys. Rev., B, 3, 389 (1971).

    Google Scholar 

  9. R. N. Choshtagore, Phys. Rev., B, 3, 397 (1971).

    Google Scholar 

  10. R. N. Choshtagore, Phys. Rev., B, 3, 2507 (1971).

    Google Scholar 

  11. M. F. Millea, J. Phys. Chem. Soc.,27, 315 (1966).

    Google Scholar 

  12. R. L. Longini and R. F. Greene, Phys. Rev.,102, 992 (1956).

    Google Scholar 

  13. A. F. Willoughby, J. Mater. Sci., 3, 89 (1968).

    Google Scholar 

  14. S. M. Hu, Phys. Rev.,180, 773 (1969).

    Google Scholar 

  15. V. A. Panteleev and N. E. Rudoi, Fiz. Tekh. Poluprov.,4, 1368 (1970).

    Google Scholar 

  16. V. A. Panteleev and N. E. Rudoi, Fiz. Tekh. Poluprov.,5, 2802 (1971).

    Google Scholar 

  17. M. Hirata, M. Hirata, and H. Saito, J. Phys. Soc. Japan,27, 405 (1969).

    Google Scholar 

  18. A. A. Fedotov, Physical Principles of Semiconductor Devices [in Russian], Sovetskoe. Radio, Moscow (1970).

    Google Scholar 

  19. H. Ino, T. Kawamura, and M. Yasufuku, J. J. Appl. Phys.,3, 692 (1964).

    Google Scholar 

  20. S. Dash and M. L. Joshi, I. B. M. J. Res. Dev.,14, 453 (1970).

    Google Scholar 

  21. P. V. Pavlov and V. I. Pashkov, Fiz. Tverd. Tela,12, 3298 (1970).

    Google Scholar 

  22. S. M. Hu and M. S. Mock, Phys. Rev., B, 1, 2582 (1970).

    Google Scholar 

  23. A. S. Belanovskii and G. D. Baranov, Reviews of Electronic Technology, No. 15; Silicon Nitride Films [in Russian] (1968).

  24. K. Schroeder, Radiat. Effects,5, 255 (1970).

    Google Scholar 

Download references

Authors

Additional information

Translated from Izvestiya Uchebnykh Zavedenii, Fizika, No. 4, pp. 157–158, April, 1973.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Panteleev, V.A., Rudoi, N.E. & Okulich, V.I. The diffusion mechanism for elements of groups III and V in silicon. Soviet Physics Journal 16, 594–595 (1973). https://doi.org/10.1007/BF00890867

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00890867

Keywords

Navigation