Literature cited
A. Seeger and K. P. Chik, Phys. Stat. Sol.,29, 455 (1968).
P. F. Schmidt, Appl. Phys. Letters,8, 264 (1966).
K. Bulthuis, Phys. Letters,A27, 193 (1968).
V. M. Gusev and V. V. Titov, Fiz. Tekh. Poluprov.,3, No. 3 (1969).
V. A. Panteleev and L. N. Isavtseva, Izv. VUZ, Fizika, No. 8, 27 (1969).
G. I. Voronkova, V. V. Voronkov, M. I. Iglitsin, and B. M. Turovskii, Dokl. Akad. Nauk SSSR,186, 588 (1969).
K. P. Chik, Radiat. Effects,4, 33 (1970).
R. N. Choshtagore, Phys. Rev., B, 3, 389 (1971).
R. N. Choshtagore, Phys. Rev., B, 3, 397 (1971).
R. N. Choshtagore, Phys. Rev., B, 3, 2507 (1971).
M. F. Millea, J. Phys. Chem. Soc.,27, 315 (1966).
R. L. Longini and R. F. Greene, Phys. Rev.,102, 992 (1956).
A. F. Willoughby, J. Mater. Sci., 3, 89 (1968).
S. M. Hu, Phys. Rev.,180, 773 (1969).
V. A. Panteleev and N. E. Rudoi, Fiz. Tekh. Poluprov.,4, 1368 (1970).
V. A. Panteleev and N. E. Rudoi, Fiz. Tekh. Poluprov.,5, 2802 (1971).
M. Hirata, M. Hirata, and H. Saito, J. Phys. Soc. Japan,27, 405 (1969).
A. A. Fedotov, Physical Principles of Semiconductor Devices [in Russian], Sovetskoe. Radio, Moscow (1970).
H. Ino, T. Kawamura, and M. Yasufuku, J. J. Appl. Phys.,3, 692 (1964).
S. Dash and M. L. Joshi, I. B. M. J. Res. Dev.,14, 453 (1970).
P. V. Pavlov and V. I. Pashkov, Fiz. Tverd. Tela,12, 3298 (1970).
S. M. Hu and M. S. Mock, Phys. Rev., B, 1, 2582 (1970).
A. S. Belanovskii and G. D. Baranov, Reviews of Electronic Technology, No. 15; Silicon Nitride Films [in Russian] (1968).
K. Schroeder, Radiat. Effects,5, 255 (1970).
Additional information
Translated from Izvestiya Uchebnykh Zavedenii, Fizika, No. 4, pp. 157–158, April, 1973.
Rights and permissions
About this article
Cite this article
Panteleev, V.A., Rudoi, N.E. & Okulich, V.I. The diffusion mechanism for elements of groups III and V in silicon. Soviet Physics Journal 16, 594–595 (1973). https://doi.org/10.1007/BF00890867
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00890867