Soviet Physics Journal

, Volume 19, Issue 11, pp 1419–1423 | Cite as

Cathodoluminescence from epitaxial layers of p-Alx Ga1−xSb

  • A. A. Vilisov
  • V. G. Voevodin
  • V. P. Germogenov
  • F. S. Kim
  • V. S. Morozov
Article
  • 18 Downloads

Abstract

The cathodoluminescence (CL) of doped and undoped layers of p-AlxGa1−xsb(0≤x≤0.8) grown by liquid-phase epitaxy has been investigated. Changing the composition of the solid solution resulted in emission bands having maxima between 0.77 and 1.58 eV at 77°K and between 0.72 and 1.55 eV at 300°K. It is shown that the following factors play a role in determining the luminescence intensity as a function of x: 1) the transfer of electrons to the L minimum in the conduction band; 2) a decrease in the hole concentration in the layers; 3) a decrease in the concentration of nonradiative recombination centers. The CL spectrum at 77°K contains a longwavelength band whose behavior is attributed to recombination through a level similar to the level known to be present in GaSb and believed to be caused by an intrinsic defect. The ionization energy of this level increases as x increases.

Keywords

Recombination Solid Solution Conduction Band Ionization Energy Emission Band 

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Copyright information

© Plenum Publishing Corporation 1977

Authors and Affiliations

  • A. A. Vilisov
    • 1
  • V. G. Voevodin
    • 1
  • V. P. Germogenov
    • 1
  • F. S. Kim
    • 1
  • V. S. Morozov
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State UniversityUSSR

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