Soviet Physics Journal

, Volume 19, Issue 11, pp 1419–1423 | Cite as

Cathodoluminescence from epitaxial layers of p-Alx Ga1−xSb

  • A. A. Vilisov
  • V. G. Voevodin
  • V. P. Germogenov
  • F. S. Kim
  • V. S. Morozov


The cathodoluminescence (CL) of doped and undoped layers of p-AlxGa1−xsb(0≤x≤0.8) grown by liquid-phase epitaxy has been investigated. Changing the composition of the solid solution resulted in emission bands having maxima between 0.77 and 1.58 eV at 77°K and between 0.72 and 1.55 eV at 300°K. It is shown that the following factors play a role in determining the luminescence intensity as a function of x: 1) the transfer of electrons to the L minimum in the conduction band; 2) a decrease in the hole concentration in the layers; 3) a decrease in the concentration of nonradiative recombination centers. The CL spectrum at 77°K contains a longwavelength band whose behavior is attributed to recombination through a level similar to the level known to be present in GaSb and believed to be caused by an intrinsic defect. The ionization energy of this level increases as x increases.


Recombination Solid Solution Conduction Band Ionization Energy Emission Band 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature cited

  1. 1.
    Yu. A. Akimov, A. A. Burov, E. A. Zagarinskii, I. V. Kryukova, Yu. V. Petrushenko, and B. M. Stepanov, Kvantovaya Electron.,2, 68 (1975).Google Scholar
  2. 2.
    A. A. Kastal'skii, E. S. Filatova, and Yu. G. Shreter, Fiz. Tekh. Poluprovodn.,3, 159 (1969).Google Scholar
  3. 3.
    I. K. Lazareva and V. M. Stuchebnikov, Fiz. Tekh. Poluprovodn.,4, 649 (1970).Google Scholar
  4. 4.
    A. A. Kastal'skii, S. B. Mal'tsev, and Yu. G. Shreter, Fiz. Tekh. Poluprovodn.,5, 1558 (1971).Google Scholar
  5. 5.
    A. A. Kastal'skii, T. Risbaev, I. M. Fishman, and Yu. G. Shreter, Fiz. Tekh. Poluprovodn.,5, 1596 (1971).Google Scholar
  6. 6.
    A. S. Krauze and Yu. G. Shreter, Fiz. Tekh. Poluprovodn.,5, 1912 (1971).Google Scholar
  7. 7.
    I. I. Burdiyan, S. B. Mal'tsev. I. F. Mironov, and Yu. G. Shreter, Fiz. Tekh. Poluprovodn.,5, 1996 (1971).Google Scholar
  8. 8.
    W. Jakowetz, W. Rüble, K. Breuninger, and M. Pilkuhn, Phys. Status Solidi (a)12, 169 (1972).Google Scholar
  9. 9.
    A. S. Kyuregyan, I. K. Lazareva, V. M. Stuchebnikov, and A. É. Yunovich, Fiz. Tekh. Poluprovodn.,6, 242 (1972).Google Scholar
  10. 10.
    A. S. Kyurergyan, V. M. Stuchebnikov, and A. É. Yunovich, Fiz. Tekh. Poluprovodn.,6, 287 (1972).Google Scholar
  11. 11.
    C. Benoitala Gullaume and P. Lavallard, Phys. Rev. B, Solid State5, 4900 (1972).Google Scholar
  12. 12.
    C. Woelk and K. W. Benz, J. Cryst. Growth,27, 177 (1974).Google Scholar
  13. 13.
    G. M. Blom, J. Appl. Phys.,42, 1057 (1971).Google Scholar
  14. 14.
    V. V. Evstropov, A. N. Imenkov, T. P. Lideikis, B. V. Tsarenkov, Yu. M. Shernyakov, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn.,9, 1123 (1975).Google Scholar
  15. 15.
    Yu. F. Biryulin, S. P. Vul', and Yu. V. Shmartsev, Fiz. Tekh. Poluprovodn.,9, 2195 (1975).Google Scholar
  16. 16.
    C. Ance, J. Robin, A. Nguyen Van Mau, and G. Bougnot, Solid State Commun.15, 1295 (1974).Google Scholar
  17. 17.
    D. Auvergne, P. Merle, A. Zein-Eldin, H. Mathieu, and A. Nguyen Van Mau, Solid State Commun.,17, 511 (1975).Google Scholar
  18. 18.
    C. Ance and J. Robin, J. Phys. C: Solid State Physics,8, 1979 (1975).Google Scholar
  19. 19.
    S. M. Bedair, J. Electrochem. Soc.122, 1150 (1975).Google Scholar
  20. 20.
    V. P. Germogenov, A. A. Vilisov, and A. P. Vyatkin, Izv. Vyssh. Uchebn. Zaved., Fiz., No. l9, 63 (1975).Google Scholar
  21. 21.
    A. A. Vilisov, A. P. Vyatkin, V. P. Germogenov, and L. E. Épiktetova, in: Proceedings of the Third All-Union Conference on Physicochemical Properties of Doped Semiconductor Materials, October, 1975 [in Russian], Moscow (1975), p. 103.Google Scholar
  22. 22.
    I. I. Burdiyan, Doctoral Dissertation, Moscow-Leningrad, Leningrad Physicotechnical Institute (1972).Google Scholar
  23. 23.
    J. Pankove, Optical Processes in Semiconductors [Russian translation] Mir, Moscow (1973).Google Scholar
  24. 24.
    A. Nguyen Van Mau, A. Gouskov, M. Averous, and G. Bougnot, Comptes Rendue Acad. Sci.,B278, 15 (1974).Google Scholar

Copyright information

© Plenum Publishing Corporation 1977

Authors and Affiliations

  • A. A. Vilisov
    • 1
  • V. G. Voevodin
    • 1
  • V. P. Germogenov
    • 1
  • F. S. Kim
    • 1
  • V. S. Morozov
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State UniversityUSSR

Personalised recommendations