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Soviet Physics Journal

, Volume 19, Issue 12, pp 1535–1538 | Cite as

Effect of electron-ion bombardment on the growth of dielectric films in reactive sputtering

  • L. R. Bitner
  • V. A. Vedernikov
  • T. I. Danilina
  • G. V. Manyakhina
  • Z. A. Shandra
Article
  • 10 Downloads

Abstract

The mechanism by which electron — ion bombardment affects the growth of a silicon nitride film obtained by reactive sputtering in an apparatus based on a Penning discharge is investigated. The temperature and the degree of irradiation of the substrate are determined as functions of the distance from the substrate to the aperture in the anode. It is established that the presence or absence of bombardment leads to a difference in the formation of reactively sputtered silicon nitride films.

Keywords

Silicon Nitride Silicon Nitride Dielectric Film Nitride Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1977

Authors and Affiliations

  • L. R. Bitner
    • 1
  • V. A. Vedernikov
    • 1
  • T. I. Danilina
    • 1
  • G. V. Manyakhina
    • 1
  • Z. A. Shandra
    • 1
  1. 1.Tomsk Institute of Automatic Control Systems and RadioelectronicsUSSR

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