Applied physics

, Volume 13, Issue 1, pp 101–103 | Cite as

Lattice reordering in Pb implanted Ge crystals

  • S. U. Campisano
  • P. Baeri
  • G. Ciavola
  • G. Foti
Contributed Papers


Channeling effect and sheet resistivity techniques have been used to investigate the damage induced by 40 keV Pb implantation in Ge crystals. At 450° the reordering of the Ge lattice occurs simultaneously to the out-diffusion of the implanted Pb atoms while the recovery of the sheet resistivity occurs at higher temperatures. 90% of the implanted atoms still retained in the crystal are located in substitutional sites.




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Copyright information

© Springer-Verlag 1976

Authors and Affiliations

  • S. U. Campisano
    • 1
  • P. Baeri
    • 1
  • G. Ciavola
    • 1
  • G. Foti
    • 1
  1. 1.Istituto di Struttura della Materia dell'Università, CataniaCataniaItaly

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