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Production of low-dislocation single crystals of Cu-Si alloy and study of the dependence of the microhardness on the dislocation density and the percentage content of silicon in the copper

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Literature cited

  1. A. G. Basariya, V. V. Sanadze, and B. K. Kapanadze, “Production of low-dislocation single crystals of copper,” Tr. Gruzinsk. Politekh. Inst. im. V. I. Lenina, No. 8, 17–20 (1971).

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  2. A. G. Basariya, B. K. Kapanadze, and V. V. Sanadze, Kristallografiya,18, No. 3, 651–652 (1973).

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  3. P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, and M. J. Whelan, Electron Microscopy of Thin Crystals, Butterworths, London (1965).

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  5. V. V. Sanadze, B. K. Kapanadze, and A. G. Basariya, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 7, 130 (1970).

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Authors and Affiliations

  1. V. I. Lenin Georgian Polytechnic Institute, USSR

    A. G. Basariya & V. V. Sanadze

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  1. A. G. Basariya
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  2. V. V. Sanadze
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 125–127, January, 1975.

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Basariya, A.G., Sanadze, V.V. Production of low-dislocation single crystals of Cu-Si alloy and study of the dependence of the microhardness on the dislocation density and the percentage content of silicon in the copper. Soviet Physics Journal 18, 105–107 (1975). https://doi.org/10.1007/BF00889822

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  • DOI: https://doi.org/10.1007/BF00889822

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