Skip to main content
Log in

Laser induced reorder in Pb implanted Ge

  • Contributed Papers
  • Published:
Applied physics Aims and scope Submit manuscript

Abstract

Ge samples implanted with 40 keV Pb at a fluence of 3×1015/cm2 were irradiated with ruby laser single pulses of 15ns duration. Reordering of the damaged layer occurs for energy density irradiation above 0.6 J/cm2. The Pb atoms redistribute with a large component at the sample surface which is easily etched off. The remaining part of Pb impurities is substitutionally located, and the concentration exceeds the solid solubility limit by three order of magnitude. The formation of the metastable solution is explained in terms of a transient liquid layer produced during laser irradiation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. E. Rimini (ed.): Proc. Laser Effects in Ion Implanted Semiconductors, Istituto di Struttura della Materia-Catania, Italy (1978)

  2. H. J. Leamy, J. M. Poate, J. Ferris (eds.):Laser-Solid Interactions and Laser Processing, A.I.P. Conf. No. 50 (Amer. Inst. Phys., New York 1979)

    Google Scholar 

  3. P. Baeri, S. U. Campisano, G. Foti, E. Rimini: J. Appl. Phys.50, 788 (1979)

    Article  ADS  Google Scholar 

  4. A. V. Dvurechenskii, G. A. Kachurin, A. Kh. Antonenko: Radiat. Eff.37, 179 (1978)

    Google Scholar 

  5. F. A. Trumbore: Bell System Tech. J.39, 205 (1960)

    Google Scholar 

  6. S. U. Campisano, P. Baeri, G. Ciavola, G. Foti: Appl. Phys.13, 101 (1977)

    Article  ADS  Google Scholar 

  7. See, e.g., B. R. Appleton, G. Foti: Channeling inIon Beam Handbook for Material Analysis, ed. by J. W. Mayer and E. Rimini (Academic Press, New York 1977) Chap. 3

    Google Scholar 

  8. B. Smith:Ion Implantation Range (Learned Information Oxford 1977)

    Google Scholar 

  9. J. S. Williams: Nucl. Instrum. Methods126, 205 (1975)

    Article  Google Scholar 

  10. B. Chalmers:Principles of Solidification (John Wiley, New York 1967) Chap. 5

    Google Scholar 

  11. W. G. Pfann:Zone melting (John Wiley, New York 1966) Chaps. 1 and 2

    Google Scholar 

  12. B. K. Jindal, W. A. Tiller: J. Chem. Phys.49, 4632 (1968)

    Article  Google Scholar 

  13. C. W. White, S. R. Wilson, B. R. Appleton: J. Appl. Phys.51, 245 (1980)

    Google Scholar 

  14. H. J. Leamy, J. C. Bean, J. M. Poate, G. K. Celler: J. Cryst. Growth15, 795 (1979)

    Google Scholar 

  15. J. C. Brice:The Growth of Crystals from the Melt (North Holland, Amsterdam 1965), p. 33

    Google Scholar 

  16. K.A.Jackson, H.J.Leamy: In: [Ref. 1b, p. 150]

    Google Scholar 

  17. P.Baeri, S.U.Campisano, M.G.Grimaldi, E.Rimini: Surface accumulation of impurities after laser induced melting. Material Research Society Symposium on Laser and Electron Beam Processing of Materials, Cambridge, MA (Nov. 27–30, 1979)

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Campisano, S.U., Grimaldi, M.G., Baeri, P. et al. Laser induced reorder in Pb implanted Ge. Appl. Phys. 22, 201–203 (1980). https://doi.org/10.1007/BF00886007

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00886007

PACS

Navigation