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The incorporation of Ga in LPE-grown La, Ga: YIG films

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Abstract

A study on the horizontally LPE-grown La, Ga: YIG films is presented. With the spin wave resonance technique the ratio of the saturation magnetizations of the bulk and transient layer has been measured. The average saturation magnetization was determined by means of a vibrating sample magnetometer and the Ga concentration by x-ray fluorescence analysis. These data are compared with the growth rates of both the transient and the bulk layer. A systematic dependence of the magnetization on the growth rate is found.

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Authors and Affiliations

  1. Philips Research Laboratories, Eindhoven, The Netherlands

    H. A. Algra & J. M. Robertson

  2. Philips Forschungslabor, D-2000, Hamburg, Fed. Rep. Germany

    H. Dötsch

Authors
  1. H. A. Algra
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  2. J. M. Robertson
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  3. H. Dötsch
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Algra, H.A., Robertson, J.M. & Dötsch, H. The incorporation of Ga in LPE-grown La, Ga: YIG films. Appl. Phys. 22, 189–191 (1980). https://doi.org/10.1007/BF00886004

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  • DOI: https://doi.org/10.1007/BF00886004

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