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Effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors

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Abstract

An attempt is made to investigate the effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors havingn-channel inversion layers under the weak electric-field limit. It is found, takingn-channel InSb as an example, that both the MOS and surface capacitances show spiky oscillations with changing magnetic field. It is further observed that the sharpness and the depths of the spikes increase with increasing magnetic field whereas the depths are found to decrease with increasing thickness of the insulating layer.

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Authors and Affiliations

  1. Institute of Radio Physics and Electronics, University College of Science and Technology, 92, Acharya P.C. Road, 700009, Calcutta, India

    D. R. Choudhury, A. K. Chowdhury & A. N. Chakravarti

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  1. D. R. Choudhury
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  2. A. K. Chowdhury
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  3. A. N. Chakravarti
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On leave of absence from the Department of Physics, Patna University, Patna, India

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Choudhury, D.R., Chowdhury, A.K. & Chakravarti, A.N. Effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors. Appl. Phys. 22, 145–148 (1980). https://doi.org/10.1007/BF00885997

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  • DOI: https://doi.org/10.1007/BF00885997

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