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Applied physics

, Volume 16, Issue 4, pp 345–352 | Cite as

Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs

  • G. Abstreiter
  • E. Bauser
  • A. Fischer
  • K. Ploog
Contributed Papers

Abstract

It is shown that Raman spectroscopy can provide useful information on characteristic properties of thin crystalline films of compound semiconductors. Crystal orientation, carrier concentration, scattering times of charge carriers, composition of mixed crystals and depth profiles can be studied in thin layers and heterostructures of GaAs and AlxGa1−xAs. The advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed.

PACS

78.30-j 68.55+b 

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Copyright information

© Springer-Verlag 1978

Authors and Affiliations

  • G. Abstreiter
    • 1
  • E. Bauser
    • 1
  • A. Fischer
    • 1
  • K. Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed. Rep. Germany

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