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Applied physics

, Volume 18, Issue 3, pp 275–278 | Cite as

Defect annealing in phosphorus implanted silicon: A D.L.T.S. study

  • J. Krynicki
  • J. C. Bourgoin
Contributed Papers

Abstract

Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation are described. Four electron traps are found: atE c -0.21 eV,E c -0.39 eV,E c -0.52 eV andE c -0.58 eV and their cross-sections estimated. The annealing behaviour in the range 450–800°C of these traps is described.

PACS

61.70T 61.70E 

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Copyright information

© Springer-Verlag 1979

Authors and Affiliations

  • J. Krynicki
    • 1
  • J. C. Bourgoin
    • 1
  1. 1.Groupe de Physique des Solides de l'Ecole Normale SupérieureUniversité Paris VIIParis CEDEX 05France

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