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Absence of dislocation-induced luminescence in GaAs

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Abstract

Photoluminescence measurements on highly deformed GaAs samples in the near band edge region as well as in the region far below the bandgap are reported. The radiative recombination gives no evidence for dislocation-induced states in the energy gap.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, D-7000, Stuttgart 80, Fed. Rep. Germany

    K. Böhm

  2. Institut für Angewandte Physik, Technische Universität, D-3392, Clausthal, Fed. Rep. Germany

    D. Gwinner

Authors
  1. K. Böhm
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  2. D. Gwinner
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Böhm, K., Gwinner, D. Absence of dislocation-induced luminescence in GaAs. Appl. Phys. 17, 155–157 (1978). https://doi.org/10.1007/BF00885248

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  • DOI: https://doi.org/10.1007/BF00885248

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