Photoconductivity and Hall-effect of iron-diffused silicon

Abstract

Silicon diffused with iron is investigated by photoconductivity and Hall-effect measurements. We used three different iron sources, namely FeCl₃, an evaporated iron film, and Fe by ion implantation. Iron exhibits inp-type, boron-doped 1 Ωcm silicon and in high-resistivity (1 kΩcm) silicon an acceptor level ofE _c -0.55 eV. No influence of the iron was observed inn-type, phosphorous-doped 0.5 Ωcm silicon. NoE _v +0.4 eV level was observed. It is pointed out that iron in silicon must be regarded in connection with at least three parameters, namely the quenching rate, the chemical identity of the shallow dopant, and the initial resistivity of the silicon samples.