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Laser induced single-crystal transition in polycrystalline silicon

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Abstract

Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 〈100〉 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 Å thick polycrystalline layer is about 70 MW/cm2 (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm2.

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References

  1. G.A. Kachurin, N.B. Pridachin, L.S. Smirnov: Sov. Phys. Semicond.9, 946 (1976)

    Google Scholar 

  2. E.I. Shtyrkov, I.B. Khaibullin, M.M. Zaripov, M.F. Galyatuchinov, R.M. Bayazitov: Sov. Phys. Semicond.9, 1309 (1976)

    Google Scholar 

  3. A.Kh. Antonenko, N.N. Gerasimenko, A.V. Dvurechenskii, L.S. Smirnov, I.B. Tscitlin: Sov. Phys. Semicond.10, 81 (1976)

    Google Scholar 

  4. M.M. Zaripov, I.B. Khaybullin, E.I. Shtyrkov: Sov. Phys. Usp.19, 1032 (1976)

    Article  Google Scholar 

  5. G. Foti, E. Rimini, G. Vitali, M. Bertolotti: Appl. Phys.14, 189 (1977)

    Article  ADS  Google Scholar 

  6. G. Vitali, M. Bertolotti, G. Foti, E. Rimini: InAmorphous and Liquid Semiconductors, Proc. 7th Intern. Conf., Edinburgh 1977, ed. by W.E. Spear (University of Dundee, 1977) p. 24

  7. G. Vitali, M. Bertolotti, G. Foti, E. Rimini: Phys. Lett.63A, 351 (1977)

    ADS  Google Scholar 

  8. G. Foti, E. Rimini, G. Vitali, M. Bertolotti: Proc. of the Symp. “Thin Film Phenomena-Interfaces and Interactions”, ed. by J.E. Baglin and J.M. Poate, (The Electrochemical Society, Princeton, N. J. 08540, 1978), vol. 78-2, pp. 88–98

    Google Scholar 

  9. M.H. Brodsky, R.S. Title, K. Weiser, G.D. Pettit: Phys. Rev. E1, 2632 (1970)

    ADS  Google Scholar 

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Authors and Affiliations

  1. Istituto di Fisica, Facoltà di Ingegneria, Università di Roma, Roma, Italy

    G. Vitali & M. Bertolotti

  2. Istituto di Struttura della Materia, Università di Catania, Catania, Italy

    G. Foti & E. Rimini

Authors
  1. G. Vitali
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  2. M. Bertolotti
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  3. G. Foti
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  4. E. Rimini
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Vitali, G., Bertolotti, M., Foti, G. et al. Laser induced single-crystal transition in polycrystalline silicon. Appl. Phys. 17, 111–113 (1978). https://doi.org/10.1007/BF00885039

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  • DOI: https://doi.org/10.1007/BF00885039

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