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A new model of the thermal growth of a silicon dioxide layer

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Abstract

A detailed model of the kinetic law of silicon wafer oxidation is presented. Emphasis is placed on the term that describes the reaction rate of the oxidation equations. The dependence of the electrochemical nature of the oxidizing agent (O− and O =2 ions) on the kinetic law of oxide layer formation is shown. Results of the silicon dioxide profils accurately measured by an ionic probe are also reported.

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Author notes

  1. J. Llabres

    Present address: Applied Physics Dept. U.A.M. Cantoblanco, Madrid

Authors and Affiliations

  1. Laboratoirio de Microelectronica, I.E.C.-Cenfa “L. Torres Quevedo”, Serrano 144, Madrid-6, Spanien

    A. Lora-Tamayo, E. Dominguez, E. Lora-Tamayo & J. Llabres

Authors
  1. A. Lora-Tamayo
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  2. E. Dominguez
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  3. E. Lora-Tamayo
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  4. J. Llabres
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Lora-Tamayo, A., Dominguez, E., Lora-Tamayo, E. et al. A new model of the thermal growth of a silicon dioxide layer. Appl. Phys. 17, 79–84 (1978). https://doi.org/10.1007/BF00885034

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  • DOI: https://doi.org/10.1007/BF00885034

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