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Generalized diffusion equation for impurity atoms in semiconductor crystals

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Abstract

A diffusion equation is obtained for impurity atoms migrating by means of the formation of equilibrium complexes with intrinsic point defects, the distribution of which is nonequilibrium and nonuniform.

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Authors and Affiliations

  1. Minsk Radio Engineering Institute, USSR

    V. A. Labunov & O. I. Velichko

Authors
  1. V. A. Labunov
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  2. O. I. Velichko
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Additional information

Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 57, No. 5, pp. 805–810, November, 1989.

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Labunov, V.A., Velichko, O.I. Generalized diffusion equation for impurity atoms in semiconductor crystals. Journal of Engineering Physics 57, 1351–1355 (1989). https://doi.org/10.1007/BF00871273

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  • DOI: https://doi.org/10.1007/BF00871273

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