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Analysis of the planar transistor at medium and high injection levels

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Soviet Physics Journal Aims and scope

Abstract

The processes occurring in the base of a planar transistor of the p-n-p type at medium and high injection levels were investigated by an approximate method, taking into account explicity the space charge, the electric field, and scattering at moving carriers. For nonstationary injection the current densities are described by the used combination of hyperbolic functions.

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Abbreviations

pa, n0:

equilibrium concentration of holes and elections

Tp, rn:

lifetime of holes and electrons taking into account surface recombination

jp, jn:

current density of holes and electrons

Dp, Dn, δp, jjn:

diffusion coefficients and mobilities for holes and electrons respectively

NA, NQ:

concentration of acceptor and donor impurities

E:

electric field intensity

q:

charge per hole

s:

dielectric constant of semiconductor

b = Mn/Mp! x:

coordinate measured from emitter towards collector

Wn:

width of base

Wp:

width of emitter region

d(Vc):

width of p-n junction with reverse bias Vc at junction

k:

Boltzman's constant

T:

absolute temperatme

h:

Planck's constant

mo:

mass of free electron

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Authors and Affiliations

  1. Kuznetsov Siberian Institute of Technical Physics, USSR

    I. N. Vazhenin

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  1. I. N. Vazhenin
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Vazhenin, I.N. Analysis of the planar transistor at medium and high injection levels. Soviet Physics Journal 8, 115–120 (1965). https://doi.org/10.1007/BF00868564

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  • DOI: https://doi.org/10.1007/BF00868564

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