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Transient process in the instantaneous switching of a semiconductor diode from the forward to the neutral direction

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Soviet Physics Journal Aims and scope

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References

  1. H. Z. Armstrong, J. of Appl. Phys., vol. 27, no. 4, 420–421, 1956.

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  3. Ledenhandler and Giacoletto, Proc. of IRE, vol. 43, 478–483, April, 1955.

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  4. V. I. Gaman and V. M. Kalygina, Collected Proceedings of a. Symposium on Electronic Processes at the Surface of Semiconductors [in Russian], Novosibirsk, June, 1965 in press.

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Authors and Affiliations

  1. Kuznetsov Siberian Institute of Technical Physics, USSR

    V. I. Gaman & V. M. Kalygina

Authors
  1. V. I. Gaman
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  2. V. M. Kalygina
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Gaman, V.I., Kalygina, V.M. Transient process in the instantaneous switching of a semiconductor diode from the forward to the neutral direction. Soviet Physics Journal 8, 51–52 (1965). https://doi.org/10.1007/BF00868546

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  • DOI: https://doi.org/10.1007/BF00868546

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