Conclusions
Theoretical relationships have been derived that associate the characteristics of modulated GR-noise with the parameters of the various kinds of levels located in an SCR. These relationships can be utilized to calculate the modulated GR-noise in a broad class of devices and structures. It has been shown that an essential role may be played in the formation of this noise by the fluctuations that accompany the adherence of current carriers in a narrow region of a SCR. It is revealed that during the flow of large collector currents in transistors or of large photocurrents in photodiodes the role of adherence noise from minority carriers, as well as of recombination noise, is increased. Two different kinds of methods for barrier-noise spectroscopy of the levels are proposed.
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Translated from Izmeritel'naya Tekhnika, No. 4, pp. 59–61, March, 1990.
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Luk'yanchikova, N.B. Spectroscopic methods for noise levels in semiconductor materials and devices. Meas Tech 33, 394–399 (1990). https://doi.org/10.1007/BF00867839
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DOI: https://doi.org/10.1007/BF00867839