Abstract
The equation of diffusion of silicon atoms in gallium arsenide is obtained in a from convenient for numerical solution.
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References
O. I. Velichko, A. A. Egorov, and S. K. Fedoruk, Inzh.-Fiz. Zh.,65, No. 5, 567–572 (1993).
V. A. Lanunov and O. I. Velichko, Inzh.-Fiz. Zh.,57, No. 5, 805–810 (1989).
A. A. Samarskii, Theory of Difference Schemes [in Russian], Moscow (1977).
V. N. Abrashin, Diff. Uravn.,22, No. 7, 1107–1119 (1986).
U. M. Gösele, Festkorperprobleme, in: Advances in Solid State Physics, 26, Braunschweig (1986), pp. 89–112.
V. N. Abrashin, O. I. Velichko, A. A. Egorov, and V. A. Labunov, Avtometriya, No. 2, 67–72 (1982).
Additional information
Minsk Radio Engineering Institute, Belorussian State University, Minsk. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 66, No. 1, pp. 83–86, January, 1994.
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Velichko, O.I., Egorov, A.A. & Fedoruk, S.K. Modeling of silicon diffusion in gallium arsenide. 2. Diffusion equation. J Eng Phys Thermophys 66, 75–78 (1994). https://doi.org/10.1007/BF00862968
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DOI: https://doi.org/10.1007/BF00862968