Journal of Engineering Physics and Thermophysics

, Volume 65, Issue 5, pp 1091–1096 | Cite as

Modeling of silicon diffusion in gallium arsenide

1. Microscopic mechanisms of diffusion and a model of the transitions of silicon atoms between crystal sublattices
  • O. I. Velichko
  • A. A. Egorov
  • S. K. Fedoruk


A model is developed and a study is performed for amphoteric diffusion of silicon in gallium arsenide. A comparison of predictions with experimental data indicated adequacy of the devised model and high efficiency of the numerical method for solving the diffusion equation.


Silicon Experimental Data Statistical Physic Gallium Diffusion Equation 
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Copyright information

© Plenum Publishing Corporation 1994

Authors and Affiliations

  • O. I. Velichko
  • A. A. Egorov
  • S. K. Fedoruk

There are no affiliations available

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