The theory of radical recombination luminescence in semiconductors
The dependence of the intensity of the “basic” band of radical recombination luminescence on the pressure and temperature was discussed.
With certain assumptions, the position of the Fermi level was calculated as a function of the pressure and temperature. The dependence of the luminescence intensity of the pressure at not too low pressures is linear; the temperature dependence passes through a maximum. These results agree with the experimental data.
KeywordsExperimental Data Recombination Fermi Level Luminescence Intensity Radical Recombination
Unable to display preview. Download preview PDF.
- 1.V. V. Styrov and A. I. Bazhin, Izv. Vyzov. Fizika, No. 12, 104 (1967).Google Scholar
- 2.K. Sansier, J. Chem. Phys.,42, 1240 (1965).Google Scholar
- 3.F. F. Vol'kenshtein, A. I. Gorban', and V. A. Sokolov, Kinetika i Kataliz,4, 24 (1963).Google Scholar
- 4.F. F. Vol'kenshtein and V. A. Sokolov, Izv. Akad. Nauk SSSR, Ser. Khim., 1247 (1970).Google Scholar
- 5.V. S. Kuznetsov and V. B. Sandomirskii, Kinetika i Kataliz,3, 724 (1962).Google Scholar