Summary
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1.
A possible explanation of the relation observed experimentally in a number of papers for the complex resistance of a semiconductor contact as a function of surface potential and frequency is that incompletely ionized electron levels are present in the volume of the semiconductor.
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2.
The dependence of the capacity and resistance on the potential and frequency due to volume and surface [6] levels, may be very different.
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Literature cited
T. P. Dirintseva and Yu. V. Pleskov, Izv. AN SSSR, Chemistry Series 1965, No. 2.
V. A. Tyagai, Izv. AN SSSR, Chemistry Series 1964, 34.
H. Gobrecht, Ber. Bunsen. Ges.,67, No. 2, 142 (1963).
R. Smith, Semiconductors [Russian translation], IL, Moscow (1962).
W. Shockley and W. T. Read, Phys. Rev.,87, 835 (1952).
Yu. Ya. Gurevich and V. A. Myamlin, Izv. AN SSSR, Chemistry Series 1964, 1776.
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Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 12 p. 2237–2240, December, 1964
The authors express their gratitude to V. G. Levich for useful discussion.
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Myamlin, V.A., Gurevich, Y.Y. Effect of volume levels on the complex resistance of a semiconducting contact. Russ Chem Bull 13, 2141–2144 (1964). https://doi.org/10.1007/BF00844241
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DOI: https://doi.org/10.1007/BF00844241