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Measurement Techniques

, Volume 27, Issue 6, pp 565–567 | Cite as

An ionization method of monitoring the relative thickness of the collector of planar transistor structures

  • E. R. Astvatsatur'yan
  • P. K. Skorobogatov
  • A. A. Tomchuk
Measurement of Ionizing Radiation
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Keywords

Physical Chemistry Analytical Chemistry Relative Thickness Ionization Method Transistor Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Literature cited

  1. 1.
    P. K. Skorobogatov and S. A. Sobolev, in: Nuclear Electronics [in Russian], No. 11, T. M. Agakhanyan (ed.), Atomizdat, Moscow (1980), p. 80.Google Scholar
  2. 2.
    F. Larin, Radiator Effects in Semiconductor Devices, Wiley, New York (1968).Google Scholar
  3. 3.
    P. K. Skorobogatov, in: Nuclear Electronics [in Russian], T. M. Agakhanyan (ed.), Atomizdat, Moscow (1979), No. 10, p. 80.Google Scholar
  4. 4.
    A. Ya. Fedotov (ed.), Silicon Planar Transistors [in Russian], Sovet-skoe Radio, Moscow (1973).Google Scholar
  5. 5.
    R. F. Richards and P. W. Willauson, IEEE Trans.,NS-24, No. 3, 1090 (1977).Google Scholar

Copyright information

© Plenum Publishing Corporation 1984

Authors and Affiliations

  • E. R. Astvatsatur'yan
  • P. K. Skorobogatov
  • A. A. Tomchuk

There are no affiliations available

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