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Theory of the reverse branch of the static characteristic of a germanium diode in the prebreakdown region

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Abstract

A theory of the reverse static characteristics of planar germanium diodes based on a thermal theory of breakdown is outlined. A functional dependence, including two levels of activation of the current carriers, one of which can be put equal to zero, is taken as the isothermal. The latter case is examined in detail, and temperature curves of the voltage and peak power are plotted, together with a family of current-voltage static characteristics for a given leakage resistance. The theoretical results are compared with experimental data.

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Authors and Affiliations

  1. Novosibirsk Electrotechnical Institute, USSR

    I. M. Senderikhin

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  1. I. M. Senderikhin
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Senderikhin, I.M. Theory of the reverse branch of the static characteristic of a germanium diode in the prebreakdown region. Soviet Physics Journal 10, 71–75 (1967). https://doi.org/10.1007/BF00838537

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  • DOI: https://doi.org/10.1007/BF00838537

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