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Trapping centers in x-irradiated quartz

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Conclusions

  1. 1.

    These studies of the effect of annealing on the luminescent and dielectric properties of synthetic quartz confirm the suggestion that electrons localized at traps are responsible for the additional polarization which occurs during irradiation of crystalline quartz; these results also show that the traps are nonimpurity defects which form during the annealing.

  2. 2.

    Measurements of the thermally stimulated exoelectroa emission of crystalline quartz have shown that the emission and trapping centers in quartz are spatially distinct [9], in contradiction of the results of [10].

  3. 3.

    The x-ray luminescence spectrum of crystalline quartz indicates that several types of emission centers may be present.

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Literature cited

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    V. G. Voevodin & G. I. Potakhova

Authors
  1. V. G. Voevodin
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  2. G. I. Potakhova
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 11, pp. 132–134, November, 1969.

Reported to the I Intercollegiate Conference on Radiation Physics, Tomsk, June 5–10, 1967.

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Voevodin, V.G., Potakhova, G.I. Trapping centers in x-irradiated quartz. Soviet Physics Journal 12, 1477–1479 (1969). https://doi.org/10.1007/BF00838308

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  • DOI: https://doi.org/10.1007/BF00838308

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