Soviet Physics Journal

, Volume 13, Issue 6, pp 766–770 | Cite as

Energy-band structure of semiconductors having the chalcopyrite lattice II. MgSiP2, ZnGeP2, ZnSiAs2, and CdSiP2

  • A. S. Poplavnoi
  • Yu. I. Polygalov
  • V. A. Chaldyshev
Article

Abstract

The pseudopotential method is used to calculate the band structure of MgSiP2, ZnGeP2, ZnSiAs2, and CdSiP2. The valence band of these compounds is shown to consist of several allowed subbands separated by energy gaps. There are two levels at the top of the valence band, slightly separated in ZnGeP2 and ZnSiAs2 and well-separated in MgSiP2 and CdSiP2 — in which there is significant tetragonal compression of the lattice. The effective electron masses at the bottom of the conduction band turn out to be anisotropic, with m∥/m ∼ 7–10.

Keywords

Conduction Band Valence Band Band Structure Chalcopyrite Electron Masse 

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Literature cited

  1. 1.
    A. S. Poplavnoi, Yu. I. Polygalov, and V. A. Chaldyshev, Izv. VUZ. Fiz., No. 11, 58 (1969).Google Scholar
  2. 2.
    M. L. Cohen and T. K. Bergstresser, Phys. Rev.,141, 789 (1966).Google Scholar
  3. 3.
    A. S. Poplavnoi, Dissertation [in Russian], Tomsk (1967).Google Scholar
  4. 4.
    L. H. Falicov and S. Golin, Phys. Rev.,137, A871 (1965).Google Scholar
  5. 5.
    W. A. Harrison, Pseudopotentials in the Theory of Metals, Benjamin, New York (1966).Google Scholar
  6. 6.
    R. Trykozko and N. A. Goryunova, Izv. Akad. Nauk SSSR, Neorgan. Mat.,4, 2101 (1968).Google Scholar
  7. 7.
    A. S. Borschevskii, N. A. Goryunova, F. P. Kasamanly, and D. N. Nasledov, Phys. Stat. Solidi,21, 9 (1967).Google Scholar
  8. 8.
    A. S. Poplavnoi, Izv. VUZ. Fiz., No. 9, 142 (1968).Google Scholar
  9. 9.
    A. A. Baipolin, N. A. Goryunova, E. O. Osmanov, Yu. V. Rud', and D. E. Tret'yakov, Dokl. Akad. Nauk SSSR,154, 1116 (1964).Google Scholar
  10. 10.
    F. P. Kesamanly, Yu. V. Rud', and S. V. Slobodchikov, Dokl. Akad. Nauk SSSR,161, 1065 (1965).Google Scholar
  11. 11.
    F. P. Kesamanly, S. G. Kroptoru, Yu. V. Rud', V. V. Sobolev, and N. N. Syrbu, Dokl. Akad. Nauk SSSR,163, 868 (1965).Google Scholar
  12. 12.
    J. E. Snelle, G. J. Barrell, T. S. Moss, and I. C. Malberley, Abstracts of Reports to the International Conference on the Physics of Semiconductors [in Russian], Moscow (1968), p. 99.Google Scholar

Copyright information

© Consultants Bureau 1973

Authors and Affiliations

  • A. S. Poplavnoi
    • 1
  • Yu. I. Polygalov
    • 1
  • V. A. Chaldyshev
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical InstituteUSSR

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