Abstract
A multiprobe method is proposed for measuring the Hall carrier mobility of high-resistivity epitaxial semiconducting films. The corresponding boundary-value problem is solved to obtain an equation giving the Hall carrier mobility in terms of experimental results. Values of a factor which appears in this equation and which depends on the sample geometry and probe arrangement are tabulated.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 85–89, June, 1970.
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Polyakov, N.N., Kon'kov, V.L. Probe measurement of the Hall carrier mobility in high-resistivity epitaxial semiconducting films. Soviet Physics Journal 13, 758–761 (1970). https://doi.org/10.1007/BF00836696
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DOI: https://doi.org/10.1007/BF00836696