Abstract
An attempt is made to use the method of the B(t) field to resolve the contradiction between experimental data on the temperature dependence of the mobility in semiconductors of the NiO type. The Hall constant is calculated, and a more detailed analysis is made of relations reported previously. It is shown that this contradiction can be removed by the method of the B(t) field, although the Hall and drift mobilities are the same.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 79–84, June, 1970.
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Ginzburg, L.P. Transport in semiconductors of the NiO type. Soviet Physics Journal 13, 753–757 (1970). https://doi.org/10.1007/BF00836695
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DOI: https://doi.org/10.1007/BF00836695