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Carrier lifetime in single-crystal PbS films

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Abstract

The temperature dependence of the majority carrier lifetime was studied in single-crystal PbS films. In n- and p-type films in the range 300-200 ° K, τ increases exponentially with decreasing temperature, with an activation energy of e ε ≈ O. 17-0. 2 eV. This m dependence is assumed due to the trapping of minority carriers at deep levels. Below ≈160 ° K in the n-type films, τ does not depend on the temperature, while in the p-type films, τ decreases exponentially with an activation energy of ε ≈ 0. 11–0. 14 eV.

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Authors and Affiliations

  1. Gor'kii Research Physicotechnical Institute, N. I. Lobachevskii Gor'kii State University, USSR

    L. M. Batukova & I. A. Karpovich

Authors
  1. L. M. Batukova
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  2. I. A. Karpovich
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Translated from Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 64–67, June, 1970.

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Batukova, L.M., Karpovich, I.A. Carrier lifetime in single-crystal PbS films. Soviet Physics Journal 13, 741–743 (1970). https://doi.org/10.1007/BF00836692

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  • DOI: https://doi.org/10.1007/BF00836692

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