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Standard orientation specimens based on silicon single crystals

  • Physicochemical Measurements
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Measurement Techniques Aims and scope

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Literature cited

  1. V. I. Fistul', Introduction to Semiconductor Physics [in Russian], Vysshaya Shkola, Moscow (1975), p. 296.

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  2. In the collection: Semiconductor Etching [Russian translation], Mir, Moscow (1965).

  3. GOST 8.326-78: The State System of Measurements: Metrological Support to the Development, Manufacture, and Use of Unstandardized Means of Measurement: Basic Concepts [in Russian].

  4. GOST 16153-80: Single-Crystal Germanium: Technical Conditions [in Russian],

  5. GOST 8.207-76: The State System of Measurements: Direct Measurements with Multiple Observations: Methods of Processing Observational Results: Basic Concepts [in Russian].

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Authors
  1. L. P. Kholodnyi
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  2. G. I. Terent'ev
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  3. I. M. Krol'
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Additional information

Translated from Izmeritel'naya Tekhnika, No. 3, pp. 53–54, March, 1984.

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Kholodnyi, L.P., Terent'ev, G.I. & Krol', I.M. Standard orientation specimens based on silicon single crystals. Meas Tech 27, 266–268 (1984). https://doi.org/10.1007/BF00833658

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  • DOI: https://doi.org/10.1007/BF00833658

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