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Determination of the systematic measuring error of scattering parameters of shf transistors as six-terminal networks

  • Measurement of Electrical and Magnetic Quantities
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Measurement Techniques Aims and scope

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Literature cited

  1. Y. Satoda and G. E. Bodway, IEEE Solid State Circuits,SC-3, No. 3 (1968).

  2. N. A. Bakhtin and N. Z. Shvarts, in: Ya. A. Fedotov (editor), Semiconductor Devices and Their Application [in Russian], Sov. Radio, Moscow (1970).

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Authors
  1. A. I. Smirnov
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  2. A. A. Pavlyukovskii
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  3. V. I. Popov
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  4. N. I. Aleshkin
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  5. A. V. Gagarin
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Additional information

Translated from Izmeritel'naya Tekhnika, No. 2, pp. 53–56, February, 1982.

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Smirnov, A.I., Pavlyukovskii, A.A., Popov, V.I. et al. Determination of the systematic measuring error of scattering parameters of shf transistors as six-terminal networks. Meas Tech 25, 163–167 (1982). https://doi.org/10.1007/BF00829007

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  • DOI: https://doi.org/10.1007/BF00829007

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