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A Radiation method of studying thermal regimes in elements of semiconductor radioelectronics

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Journal of engineering physics Aims and scope

Abstract

A brief description is provided of the measuring installation by means of which it is possible to analyze the temperature fields of elements 5×5 mm2 in size, with a resolution on the order of 50μ m in the temperature interval 50–120° C. The measurement results carried out on transistors are given.

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References

  1. N. N. Goryunov et al., Pribory i tekhnika eksperimenta, no. 2, 1966.

  2. E. S. Schlegel, RSY,34, no. 4, 1963.

  3. Philip J. Klass, Aviation Week Space Technology, 4 May 1964.

  4. White and Jones, Elektronika, no. 24, 1966.

  5. L. Hamiter, Semiconductor Products and Solid State Technology, March, p. 41, 1967.

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Authors and Affiliations

  1. Belorussian State University, Minsk

    I. G. Leonov, V. G. Pikulik & A. V. Fedotenko

Authors
  1. I. G. Leonov
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  2. V. G. Pikulik
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  3. A. V. Fedotenko
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Leonov, I.G., Pikulik, V.G. & Fedotenko, A.V. A Radiation method of studying thermal regimes in elements of semiconductor radioelectronics. Journal of Engineering Physics 14, 180–182 (1968). https://doi.org/10.1007/BF00827996

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  • DOI: https://doi.org/10.1007/BF00827996

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