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Improving the accuracy of charge instability measurement in MOS structures

  • Measurements of Electrical and Magnetic Quantities
  • Published:
Measurement Techniques Aims and scope

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Literature cited

  1. S. A. Volkov, Mikroelektronika,4, No. 3 (1975).

  2. W. Marcimak, J. Electrochem. Soc.,123, No. 8 (1976).

  3. A. N. Blagodarov and V. F. Borodzyulya, Inventor's Certificate No. 635441, Byull. Izobret., No. 44 (1978).

  4. V. M. Koleshko and G. D. Koplon, Inventor's Certificate No. 655996, Byull. Izobret., No. 13 (1979).

  5. G. A. Borob'ev and V. A. Mukhachev, Breakdown of Thin Dielectric Films [in Russian], Sov. Radio, Moscow (1977).

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Authors
  1. N. I. Gavrilin
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  2. G. N. Demidova
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  3. é. N. Zhuravlev
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  4. A. V. Kondrat'ev
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Additional information

Translated from Izmeritel'naya Tekhnika, No. 4, pp. 53–54, April, 1982.

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Gavrilin, N.I., Demidova, G.N., Zhuravlev, é.N. et al. Improving the accuracy of charge instability measurement in MOS structures. Meas Tech 25, 347–348 (1982). https://doi.org/10.1007/BF00827423

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  • DOI: https://doi.org/10.1007/BF00827423

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