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Soviet Physics Journal

, Volume 14, Issue 9, pp 1307–1310 | Cite as

Measuring the lifetime of minority carriers in high-resistance semiconductor specimens by the probe method

  • V. L. Kon'kov
  • N. N. Polyakov
Brief Communications and Letters to the Editor
  • 12 Downloads

Keywords

Probe Method Minority Carrier Semiconductor Specimen 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Literature cited

  1. 1.
    R. Smith, Semiconductors [Russian translation], IL, Moscow (1962), Chap. 9.Google Scholar
  2. 2.
    L. J. van der Pauw, Philips Tech. Rev.,20, No. 8, 220 (1958/1959).Google Scholar
  3. 3.
    V. V. Pasynkov, L. K. Chirkin, and A. D. Shinkov, Semiconductor Devices [in Russian], Moscow (1966), Chap. 1.Google Scholar
  4. 4.
    F. M. Morse and G. Fishbach, Methods of Theoretical Physics [Bussian translation], Vol. 2, IL, Moscow (1960), Chap. 1.Google Scholar
  5. 5.
    E. Kahmke, Handbook of Ordinary Differential Equations [Bussian translation], Vol. 3, Moscow (1965).Google Scholar

Copyright information

© Consultants Bureau 1974

Authors and Affiliations

  • V. L. Kon'kov
    • 1
  • N. N. Polyakov
    • 1
  1. 1.Gor'kii Research Physicotechnical InstituteUSSR

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