Soviet Physics Journal

, Volume 14, Issue 9, pp 1307–1310 | Cite as

Measuring the lifetime of minority carriers in high-resistance semiconductor specimens by the probe method

  • V. L. Kon'kov
  • N. N. Polyakov
Brief Communications and Letters to the Editor
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Keywords

Probe Method Minority Carrier Semiconductor Specimen 

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Literature cited

  1. 1.
    R. Smith, Semiconductors [Russian translation], IL, Moscow (1962), Chap. 9.Google Scholar
  2. 2.
    L. J. van der Pauw, Philips Tech. Rev.,20, No. 8, 220 (1958/1959).Google Scholar
  3. 3.
    V. V. Pasynkov, L. K. Chirkin, and A. D. Shinkov, Semiconductor Devices [in Russian], Moscow (1966), Chap. 1.Google Scholar
  4. 4.
    F. M. Morse and G. Fishbach, Methods of Theoretical Physics [Bussian translation], Vol. 2, IL, Moscow (1960), Chap. 1.Google Scholar
  5. 5.
    E. Kahmke, Handbook of Ordinary Differential Equations [Bussian translation], Vol. 3, Moscow (1965).Google Scholar

Copyright information

© Consultants Bureau 1974

Authors and Affiliations

  • V. L. Kon'kov
    • 1
  • N. N. Polyakov
    • 1
  1. 1.Gor'kii Research Physicotechnical InstituteUSSR

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