Measuring the lifetime of minority carriers in high-resistance semiconductor specimens by the probe method
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KeywordsProbe Method Minority Carrier Semiconductor Specimen
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- 1.R. Smith, Semiconductors [Russian translation], IL, Moscow (1962), Chap. 9.Google Scholar
- 2.L. J. van der Pauw, Philips Tech. Rev.,20, No. 8, 220 (1958/1959).Google Scholar
- 3.V. V. Pasynkov, L. K. Chirkin, and A. D. Shinkov, Semiconductor Devices [in Russian], Moscow (1966), Chap. 1.Google Scholar
- 4.F. M. Morse and G. Fishbach, Methods of Theoretical Physics [Bussian translation], Vol. 2, IL, Moscow (1960), Chap. 1.Google Scholar
- 5.E. Kahmke, Handbook of Ordinary Differential Equations [Bussian translation], Vol. 3, Moscow (1965).Google Scholar
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