Abstract
The temperature distribution created by a hot probe in contact with a sample consisting of an epitaxial film and a conducting substrate is considered. The results indicate the necessary diameter for the thermal contact of the probe that will result in temperature gradients localized in the epitaxial film; a method of determining the temperature in the region of the probe contact is given. The calculations have been checked by experiment on thermal models and silicon epitaxial films.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 9, pp. 71–75, September, 1971.
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Anatychuk, L.I., Dimitrashchuk, V.T., Luste, O.Y. et al. Thermal probe measurement of the thermoemf of epitaxial films. Soviet Physics Journal 14, 1218–1221 (1971). https://doi.org/10.1007/BF00826871
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DOI: https://doi.org/10.1007/BF00826871